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We offer Opto Diode's NXIR-Series of 1064nm optimised silicon photodiodes.
The NXIR family of detectors are designed specifically for back-facet laser-monitoring applications that require improved performance in the near-infrared (NIR) spectrum from 700nm to 1100nm. NXIR-series photodidoes achieve typical responsivity of 0.65A/W at 850nm and 0.4A/W at 1000nm.
The affordable line of products provide high responsivity, high shunt resistance, low dark current, and low capacitance for greater performance.
Two photodiode chips are offered with footprints of just 0.8x0.8mm (0.64mm² with 0.36mm² active area) and 1.02x1.02mm (1.04mm²with 0.74mm² active area).
Additionally there is a 5mm� active area photodiode which is supplied in an industry-standard TO-5 package with flat window.
The NXIR family of detectors are designed specifically for back-facet laser-monitoring applications that require improved performance in the near-infrared (NIR) spectrum from 700nm to 1100nm. NXIR-series photodidoes achieve typical responsivity of 0.65A/W at 850nm and 0.4A/W at 1000nm.
The affordable line of products provide high responsivity, high shunt resistance, low dark current, and low capacitance for greater performance.
Two photodiode chips are offered with footprints of just 0.8x0.8mm (0.64mm² with 0.36mm² active area) and 1.02x1.02mm (1.04mm²with 0.74mm² active area).
Additionally there is a 5mm� active area photodiode which is supplied in an industry-standard TO-5 package with flat window.
For more information on NXIR-Series: Near-infared optimised silicon photodiodes talk to AP Technologies Ltd
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