Add My Company
The NXIR family of detectors are designed specifically for back-facet laser-monitoring applications that require improved performance in the near-infrared (NIR) spectrum from 700nm to 1100nm. NXIR-series photodidoes achieve typical responsivity of 0.65A/W at 850nm and 0.4A/W at 1000nm.
The affordable line of products provide high responsivity, high shunt resistance, low dark current, and low capacitance for greater performance.
Two photodiode chips are offered with footprints of just 0.8 x 0.8mm (0.64mm² with 0.36mm² active area) and 1.02 x 1.02mm (1.04mm²with 0.74mm² active area).
Additionally there is a 5mm² active area photodiode which is supplied in an industry-standard TO-5 package with flat window.
For more information on NXIR-Series: Near-infared optimised silicon photodiodes talk to AP Technologies Ltd