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![FRAM Click Board™ Catalogue](https://images.findtheneedle.co.uk/findtheneedle/companyimages/ec1b5964-5e4f-4626-a6ec-b4939988b8ee.jpg)
Ferroelectric RAM or FRAM is a random access memory using a ferroelectric layer to achieve non-volatility.
FRAM devices are increasingly used to replace Flash memory as they have lower power consumption and faster write cycles. However, their biggest advantage is the maximum number of read/write cycles, often from 1010 to 1014.� Data retention times of more than 10 years are also possible.
FRAM devices are more expensive than Flash devices and tend to have a smaller storage capacity.
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