FRAM Click Board™ Catalogue

Ferroelectric RAM or FRAM is a random access memory using a ferroelectric layer to achieve non-volatility.

FRAM devices are increasingly used to replace Flash memory as they have lower power consumption and faster write cycles. However, their biggest advantage is the maximum number of read/write cycles, often from 10¹⁰ to 10¹⁴.� Data retention times of more than 10 years are also possible.

FRAM devices are more expensive than Flash devices and tend to have a smaller storage capacity.

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