500 Degrees Clean Oven

Annealing at 400 to 500°C including dehydro-annealing in the film-forming process of low temperature polysicon TFT,activation annealing after ion doping and hydrogenated annealing. High temperature uniformity performance with a powerful air conditioning system and enhanced temperature heat-up and pull-down has dramatically improved processing capacity. Low oxygen concentration,below 10ppm (optional), makes the system usable for organic EL film-forming process before sealing.

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